2n3055
From HvWiki
The 2N3055 is a silicon Epitaxial-Base Planar NPN transistor mounted in Jedec TO-3 metal case. It was intended for power switching circuits, series and shunt regulators, output stages and high fidelity amplifiers. Today MOSFET transistors are cheaper and more effective in almost all applications.
Because of the low gain it requires a significant base current to drive large currents. Driving it directly from a 555 will not work very well because of the limited drive capability of the 555.
For this reason, and also because of the low collector-emitter breakdown voltage, it is not a very good choice for driving ignition coils or flybacks to generate high voltage.
| Symbol | Parameter | Value | Unit |
|---|---|---|---|
| VCBO | Collector-Base Voltage (IE = 0) | 100 | V |
| VCER | Collector-Emitter Voltage (RBE <= 100Ω) | 70 | V |
| VCEO | Collector-Emitter Voltage (IB = 0) | 60 | V |
| VEBO | Emitter-Base Voltage (IC = 0) | 7 | V |
| IC | Collector Current | 15 | A |
| IB | Base Current | 7 | A |
| Ptot | Total Dissipation at Tc <= 25 °C | 115 | W |
| hFE* | DC Current Gain IC = 4 A, VCE = 4 V | 20-70 | |
| hFE* | DC Current Gain IC = 10 A, VCE = 4 V | 5-70 |
* Pulsed: Pulse duration = 300 ms, duty cycle 1.5 %
