Insulated Gate Bipolar Transistor
From HvWiki
(Redirected from IGBT)
An Insulated Gate Bipolar Transistor (IGBT) is a device that combines "the best of" MOSFET's and bipolar transistors. They are characterized by having both high voltage and current capacity. Usually the voltage rating is 600 V or 1200 V. Small IGBTs (around TO-220) can handle around 15 A, where as the larger "brick" IGBTs can handle several hundred amperes. Their typical application is in an H-bridge for high power applications.
